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Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature
Citations:
51
References:
3
Abstract
The dielectric properties of silicon carbide SiC have been measured using cavity perturbation technique.Three tubes with diameter 2 mm, 3 mm, and 5 mm were filled with the powerful material of SiC.The measurements were taken for each tube at different frequencies 0.615 GHz, 1.412 GHz, 2.214 GHz, 3.017 GHz and 3.820 GHz in a temperature range from 25 o C to 1800 o C. The electrical conductivity and...
Keywords
Sustainable Development Goals (SDG)
2002
Article
Open Access
2-Y Citation Average
1.167
Language
Country
Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature
Citations:
51
References:
3
Abstract
The dielectric properties of silicon carbide SiC have been measured using cavity perturbation technique.Three tubes with diameter 2 mm, 3 mm, and 5 mm were filled with the powerful material of SiC.The measurements were taken for each tube at different frequencies 0.615 GHz, 1.412 GHz, 2.214 GHz, 3.017 GHz and 3.820 GHz in a temperature range from 25 o C to 1800 o C. The electrical conductivity and...
Keywords
Sustainable Development Goals (SDG)
2002
Article
Open Access
2-Y Citation Average
1.167
Language
Country