Sign in to unlock AI Chat and more features
Optically Illuminated 4H-SiC Terahertz IMPATT Device
Citations:
16
Abstract
The dynamic properties of a 4H-SiC DDR (p + p n n + type) IMPATT diode operating at 0.5 THz region are studied through DC and smallsignal analysis.The study indicates that 4H-SiC IMPATT is capable of generating high RF power (P RF ) (2.70 W) at 0.515 terahertz with high efficiency (12 %).However, the parasitic series resistance is found to produce a 7 % reduction in the negative conductance and th...
Keywords
Sustainable Development Goals (SDG)
2007
Article
Open Access
2-Y Citation Average
1.167
Language
Country
Optically Illuminated 4H-SiC Terahertz IMPATT Device
Citations:
16
Abstract
The dynamic properties of a 4H-SiC DDR (p + p n n + type) IMPATT diode operating at 0.5 THz region are studied through DC and smallsignal analysis.The study indicates that 4H-SiC IMPATT is capable of generating high RF power (P RF ) (2.70 W) at 0.515 terahertz with high efficiency (12 %).However, the parasitic series resistance is found to produce a 7 % reduction in the negative conductance and th...
Keywords
Sustainable Development Goals (SDG)
2007
Article
Open Access
2-Y Citation Average
1.167
Language
Country